BT151F_SERIES_3| Datasheet

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Philips Semiconductors

Product specification

Thyristors

BT151F series

GENERAL DESCRIPTION
Passivated thyristor in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT151FRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. 500R 500 5.7 9 100 UNIT V A A A

PINNING - SOT186
PIN 1 2 3 DESCRIPTION cathode anode gate

PIN CONFIGURATION
case

SYMBOL

case isolated

1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Ths 87 C all conduction angles half sine wave; Tj = 125 C prior to surge; with reapplied VDRM(max) t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/us -40 MAX. 500
1

UNIT V A A A A A2s A/us A V W W C C

VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current

5.7 9 100 110 50 50 2 5 5 0.5 150 125

I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/us. January 2002 1 Rev 1.000