BT151U_SERIES_C_1| Datasheet

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Philips Semiconductors

Product specification

Thyristors

BT151U series C

GENERAL DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT151URepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. 500C 500 7.5 12 100 MAX. 650C 650 7.5 12 100 MAX. 800C 800 7.5 12 100 UNIT V A A A

PINNING - SOT533, (I-PAK)
PIN NUMBER 1 2 3 tab DESCRIPTION cathode anode gate

PIN CONFIGURATION

SYMBOL

3
MBK915

anode

Top view

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb 104 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/us -40 MAX. -500C -650C -800C 5001 6501 800 7.5 12 100 110 50 50 2 5 5 0.5 150 125 UNIT V A A A A A2s A/us A V W W C C

VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current

I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/us. April 2004 1 Rev 1.000