BT169DW_1| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

Philips Semiconductors

Product specification

Thyristor logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

BT169DW

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. UNIT 400 0.6 1 8 V A A A

PINNING - SOT223
PIN 1 2 3 tab DESCRIPTION cathode anode gate anode

PIN CONFIGURATION
4

SYMBOL

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS half sine wave; Tsp 112 C all conduction angles half sine wave; Tj = 125 C prior to surge; with reapplied VDRM(max) t = 10 ms t = 8.3 ms t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/us MIN. -40 MAX. 400
1

UNIT V A A A A A2s A/us A V V W W C C

VDRM. VRRM Repetitive peak off-state voltages IT(AV) Average on-state current IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj

0.63 1 8 9 0.32 50 1 5 5 2 0.1 150 125

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/us. February 1996 1 Rev 1.100