BT258S-800R_3| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

Philips Semiconductors

Product specification

Thyristors logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

BT258S-800R

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. UNIT 800 5 8 75 V A A A

PINNING - SOT428
PIN NUMBER 1 2 3 tab cathode anode gate anode

PIN CONFIGURATION
tab

SYMBOL

2 1 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb 111 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/us -40 MAX. 800 5 8 75 82 28 50 2 5 5 0.5 150 1251 UNIT V A A A A A2s A/us A V W W C C

VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current

I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Note: Operation above 110 C may require the use of a gate to cathode resistor of 1k or less. October 2002 1 Rev 2.000