BT258_SERIES_2| Datasheet

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Philips Semiconductors

Product specification

Thyristors logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

BT258 series

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 75 600R 600 5 8 75 800R 800 5 8 75 V A A A

PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION cathode anode gate anode

PIN CONFIGURATION
tab

SYMBOL

1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb 111 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/us -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 0.5 150 1252 UNIT V A A A A A2s A/us A V W W C C

VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current

I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/us. 2 Note: Operation above 110 C may require the use of a gate to cathode resistor of 1k or less. October 2002 1 Rev 2.000