BT300S_SERIES_1| Datasheet

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Philips Semiconductors

Product specification

Thyristors

BT300S series
BT300M series

GENERAL DESCRIPTION
Glass passivated thyristors in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT300S (or BT300M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 65 600R 600 5 8 65 800R 800 5 8 65 V A A A

PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab cathode anode gate anode gate anode cathode anode

PIN CONFIGURATION
tab

SYMBOL

2 1 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb 107 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/us -40 MAX. -500R -600R -800R 5001 6001 800 5 8 65 71 21 50 2 5 5 5 0.5 150 125 UNIT V A A A A A2s A/us A V V W W C C

VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current

I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/us. September 1997 1 Rev 1.100