BTA151-650R_2| Datasheet

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Philips Semiconductors

Product specification

Thyristors sensitive gate
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications.

BTA151-650R

QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BTA151Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. 650R 650 7.5 12 100 UNIT V A A A

PINNING - SOT82
PIN 1 2 3 tab DESCRIPTION cathode anode gate anode

PIN CONFIGURATION

SYMBOL

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS half sine wave; Tmb 109 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/us MIN. -40 MAX. 650
1

UNIT V A A A A A2s A/us A V W W C C

VDRM, VRRM Repetitive peak off-state voltages IT(AV) Average on-state current IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj

7.5 12 100 110 50 50 2 12 5 0.5 150 125

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/us. January 2002 1 Rev 1.400