BTA216B_SERIES_D_E_F_3| Datasheet

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Philips Semiconductors

Product specification

Three quadrant triacs guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers.

BTA216B series D, E and F

QUICK REFERENCE DATA
SYMBOL PARAMETER BTA216BBTA216BBTA216BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600D 600E 600F 600 16 140 UNIT

VDRM IT(RMS) ITSM

V A A

PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2

PIN CONFIGURATION
mb

SYMBOL

T2
2 1 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb 99 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/us CONDITIONS MIN. MAX. 6001 16 UNIT V A

I2t dIT/dt IGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate power Average gate power Storage temperature Operating junction temperature

140 150 98 100 2 5 0.5 150 125

A A A2s A/us A W W C C

over any 20 ms period

-40 -

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/us. April 2002 1 Rev 2.000