BTA216X_SERIES_B_1| Datasheet

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Philips Semiconductors

Product specification

Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.

BTA216X series B

QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600B 600 16 140 800B 800 16 140 V A A BTA216X- 500B Repetitive peak off-state 500 voltages RMS on-state current 16 Non-repetitive peak on-state 140 current

PINNING - SOT186A
PIN 1 2 3 DESCRIPTION main terminal 1

PIN CONFIGURATION
case

SYMBOL

T2
main terminal 2 gate
1 2 3

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Ths 38 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/us CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A

I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

140 150 98 100 2 5 5 0.5 150 125

A A A2s A/us A V W W C C

over any 20 ms period

-40 -

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/us. October 1997 1 Rev 1.200