BU1706A_2| Datasheet

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1706A

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.

QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 1.5 0.25 MAX. 1750 850 5 8 100 1.0 0.6 UNIT V V A A W V A us

Tmb 25 C IC = 1.5 A; IB = 0.3 A ICM = 1.5 A; IB(on) = 0.3 A

PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION

PIN CONFIGURATION
tab

SYMBOL

c b
1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1750 850 5 8 3 5 100 4 100 150 150 UNIT V V A A A A mA A W C C

average over any 20ms period Tmb 25 C

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 60 MAX. 1.25 UNIT K/W K/W

September 1997

Rev 1.000