BU2523AX_1| Datasheet

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2523AX

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.

QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 5.5 0.15 MAX. 1500 800 11 29 45 5.0 0.3 UNIT V V A A W V A us

Ths 25 C IC = 5.5 A; IB = 1.1 A f = 64 kHz ICsat = 5.5 A; f = 64 kHz

PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION

PIN CONFIGURATION
case

SYMBOL

c b
1 2 3

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 175 7 45 150 150 UNIT V V A A A A mA A W C C

average over any 20 ms period Ths 25 C

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W

1 Turn-off current.

September 1997

Rev 1.100