BU4530AL_3| Datasheet

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4530AL

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time. CONDITIONS VBE = 0 TYP. 9 8 0.20 0.12 MAX. 1500 800 16 40 125 3.0 0.26 UNIT V V A A W V A A us us

Tmb 25 C IC = 10 A; IB = 2.22A f = 32 kHz f = 90 kHz ICsat = 9.0 A; f = 32 kHz ICsat = 8.0 A; f = 90 kHz

PINNING - SOT430
PIN 1 2 3 base collector emitter DESCRIPTION

PIN CONFIGURATION

SYMBOL

c b
1 2 3

heat collector sink

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 125 150 150 UNIT V V A A A A W C C

Tmb 25 C

April 1999

Rev 1.100