BU4540AW_1| Datasheet

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Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BU4540AW

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current fall time CONDITIONS VBE = 0 TYP. 16 8 t.b.f t.b.f MAX. 1500 800 25 40 125 3.0 t.b.f t.b.f UNIT V V A A W V A A us us

Tmb 25 C IC = 16 A; IB = 4 A f = 32kHz f = 110kHz ICsat = 16 A; f = 32kHz ICsat = 8 A; f = 110kHz

PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION

PIN CONFIGURATION

SYMBOL

c b
1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 25 40 10 15 10 125 150 150 UNIT V V A A A A A W C C

Tmb 25 C

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W

1 Turn-off current.

January 1998

Rev 1.000