BU508DW_2| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DW

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 125 1.0 2.0 UNIT V V A A W V A V us

Tmb 25 C IC = 4.5 A; IB = 1.6 A f = 16kHz IF = 4.5 A ICsat = 4.5 A; f = 16kHz

PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION

PIN CONFIGURATION

SYMBOL

c b
1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 125 150 150 UNIT V V A A A A W C C

Tmb 25 C

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W

July 1998

Rev 1.200