BUJ106AX_3| Datasheet

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ106AX

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V TYP. 0.4 10 20 MAX. 700 700 400 10 20 26 1.0 15 50 UNIT V V V A A W V ns

Ths 25 C IC = 6.0 A;IB = 1.2 A IC = 6.0 A; VCE = 5 V IC = 5.0 A; IB1 = 1A

PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION

PIN CONFIGURATION
case

SYMBOL

c b
1 2 3

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 10 20 5 10 26 150 150 UNIT V V V A A A A W C C

Ths 25 C

THERMAL RESISTANCES
SYMBOL Rthj-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS With heatsink compound in free air TYP. 60 MAX. 4.8 UNIT K/W K/W

March 1999

Rev 2.000