BUJ205AX_1| Datasheet

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Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BUJ205AX

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V TYP. MAX. 850 850 450 8 12 32 1.5 300 UNIT V V V A A W V us

Tmb 25 C IC = 5.0 A;IB = 1.0 A Ic=6A,IB1=1.2A

PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION

PIN CONFIGURATION
case

SYMBOL

c b
1 2 3

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 450 850 8 12 4 6 32 150 150 UNIT V V V A A A A W C C

Tmb 25 C

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 60 MAX. 3.95 UNIT K/W K/W

November 1998

Rev 1.000