BUJ303B_1| Datasheet

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ303B

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 0.25 10.5 300 MAX. 1050 1050 400 5 10 100 1.5 UNIT V V V A A W V ns

Tmb 25 C IC = 3 A; IB = 1 A IC = 3 A; VCE = 1.5 V IC=2.5 A,IB1=0.5 A

PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION

PIN CONFIGURATION
tab

SYMBOL

c b
1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1050 400 1050 5 10 2 4 100 150 150 UNIT V V V A A A A W C C

Tmb 25 C

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 60 MAX. 1.25 UNIT K/W K/W

March 2002

Rev 1.000