BUK107-50DS_1| Datasheet

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Philips Semiconductors

Product specification

PowerMOS transistor Logic level TOPFET
DESCRIPTION
Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK107-50DS

QUICK REFERENCE DATA
SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance MAX. 50 0.7 1.8 150 175 UNIT V A W C m

APPLICATIONS
General controller for driving lamps small motors solenoids

FEATURES
Vertical power DMOS output stage Overload protected up to 85 C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input Input clamping suitable for pull-up resistor drive circuit Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on all pins Overvoltage clamping for turn off of inductive loads

FUNCTIONAL BLOCK DIAGRAM
DRAIN

O/V CLAMP INPUT
RIG

POWER MOSFET

LOGIC AND PROTECTION

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT223
PIN 1 2 3 4 input drain source drain (tab) DESCRIPTION

PIN CONFIGURATION
4

SYMBOL
D TOPFET I

P

1

2

3

S

March 1997

1

Rev 1.200

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BUK107-50DS_1 DATASHEET