BUK110-50GL_1| Datasheet

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Philips Semiconductors

Product specification

PowerMOS transistor Logic level TOPFET
DESCRIPTION
Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.

BUK110-50GL

QUICK REFERENCE DATA
SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 5 V MAX. 50 45 125 150 35 UNIT V A W C m

APPLICATIONS
General controller for driving lamps motors solenoids heaters

FEATURES
Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads

FUNCTIONAL BLOCK DIAGRAM
DRAIN

O/V CLAMP INPUT
RIG

POWER MOSFET

LOGIC AND PROTECTION

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT404
PIN 1 2 3 mb input drain source drain DESCRIPTION

PIN CONFIGURATION
mb

SYMBOL
D TOPFET I

P

2 1 3

S

June 1996

1

Rev 1.000

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BUK110-50GL_1 DATASHEET