BUK453-100A-B_2| Datasheet

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Philips Semiconductors

Product Specification

PowerMOS transistor

BUK453-100A/B

GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK453 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 14 75 175 0.16 MAX. -100B 100 13 75 175 0.20 UNIT V A W C

PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION

PIN CONFIGURATION
tab

SYMBOL
d

1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 -100A 14 10 56 75 175 175 MAX. 100 100 30 -100B 13 9 52 UNIT V V V A A A W C C

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2 UNIT K/W K/W

April 1998

Rev 1.100