BUK7C06-40AITE_4| Datasheet

By datasheet - May 14th, 2008

BUK7C06-40AITE_4| Datasheet

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BUK7C06-40AITE
N-channel TrenchMOS standard level FET
Rev. 04 -- 23 June 2005 Product data sheet

1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and overtemperature protection.

1.2 Features
s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor

1.3 Applications
s Variable valve timing for engines s Automotive and power switching s Electrical power assisted steering s Fan control

1.4 Quick reference data
s VDS 40 V s ID 155 A s RDSon = 4.7 m (typ) s VF = 658 mV (typ) s SF = -1.54 mV/K (typ) s ID/Isense = 615 (typ)

2. Pinning information
Table 1: Pin 1 2 3 4 5 6 7 mb Pinning Description gate (G) Isense anode (A) drain (D) cathode (K) kelvin source source (S) mounting base; connected to drain (D)
4 123 567 G mb D A

Simplified outline

Symbol

SOT427 (D2PAK)

Isense S K Kelvin source
sym110