BUT12AI_1| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT12AI

GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Inductive fall time CONDITIONS VBE = 0 V TYP. 5 MAX. 1000 450 8 20 110 1.5 300 UNIT V V A A W V A ns

Ths 25 C IC = 5 A; IB = 0.86A ICon = 5 A; IBon = 1.0 A;Tj 100 C

PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION

PIN CONFIGURATION
tab

SYMBOL

c b
1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 8 20 4 6 110 150 150 UNIT V V A A A A W C C

Ths 25 C

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. MAX. 1.15 60 UNIT K/W K/W

June 1997

Rev 1.000