BYQ28X_SERIES_1| Datasheet

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Philips Semiconductors

Product specification

Rectifier diodes ultrafast
GENERAL DESCRIPTION
Glass passivated dual epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.

BYQ28X series

QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) trr PARAMETER BYQ28XRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX. 100 100 0.895 10 25 MAX. 150 150 0.895 10 25 MAX. 200 200 0.895 10 25 UNIT V V A ns

PINNING - SOT186A
PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a)

PIN CONFIGURATION
case

SYMBOL

a1 1 k2
1 2 3

a2 3

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Output current (both diodes conducting)2 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave = 0.5; Ths 92 C sinusoidal a = 1.57; Ths 95 C t = 25 us; = 0.5; Ths 92 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 10 9 14 10 50 55 12.5 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s C C

IO(RMS) IFRM IFSM

I2t Tstg Tj

1 Ths 148 C for thermal stability. 2 Neglecting switching and reverse current losses August 1996 1 Rev 1.000