PBSS9110D_2| Datasheet

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PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 02 -- 13 July 2006 Product data sheet

1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110D.

1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications
I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications

1.4 Quick reference data
Table 1. VCEO IC ICM RCEsat
[1]

Quick reference data Conditions open base single pulse; tp 1 ms IC = -1 A; IB = -100 mA
[1]

Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance

Min -

Typ 170

Max -100 -1 -3 320

Unit V A A m

Pulse test: tp 300 us; 0.02.

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PBSS9110D_2 DATASHEET