PHP6N50E_3| Datasheet

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Philips Semiconductors

Product specification

PowerMOS transistors Avalanche energy rated
FEATURES
Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance

PHP6N50E, PHB6N50E

SYMBOL
d

QUICK REFERENCE DATA VDSS = 500 V
g

ID = 5.9 A RDS(ON) 1.5
s

GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB6N50E is supplied in the SOT404 surface mounting package.

PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION

SOT78 (TO220AB)
tab

SOT404
tab

drain
1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 C to 150 C Tj = 25 C to 150 C; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 500 500 30 5.9 3.7 24 125 150 UNIT V V V A A A W C

December 1998

Rev 1.200