SI4416DY-01| Datasheet

SI4416DY-01| Datasheet

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Si4416DY
N-channel enhancement mode field-effect transistor
M3D315

Rev. 01 -- 05 June 2001

Product data

1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: Si4416DY in SOT96-1 (SO8).

2. Features
s Low on-state resistance s Fast switching s TrenchMOSTM technology.

3. Applications
s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications.

c c

4. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s)
8 5 d

Simplified outline

Symbol

gate (g) drain (d)
1 Top view 4
MBK187

g s

MBB076

SOT96-1 (SO8)

1.

TrenchMOS is a trademark of Royal Philips Electronics.


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