2N5400-D| Datasheet

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2N5400
Preferred Device

Amplifier Transistors
PNP Silicon
Features

Pb-Free Packages are Available*

http://onsemi.com
COLLECTOR 3 Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 120 130 5.0 600 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/ C W mW/ C C TO-92 CASE 29 STYLE 1 12 1 1 EMITTER 2 BASE

MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 C Derate above 25 C Total Device Dissipation @ TC = 25 C Derate above 25 C Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

3 STRAIGHT LEAD BULK PACK

3 BENT LEAD TAPE & REEL AMMO PACK

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM

2N 5400 AYWW G G

A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2007

March, 2007 - Rev. 2

Publication Order Number: 2N5400/D