2N6394-D| Datasheet

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2N6394 Series
Preferred Device

Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for halfwave ac control applications, such as motor controls, heating controls and power supplies.
Features

Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 V Pb-Free Packages are Available*

http://onsemi.com

SCRs 12 AMPERES RMS 50 thru 800 VOLTS
G A Unit V K

MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125 C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 OnState RMS Current (180 Conduction Angles; TC = 90 C) Peak NonRepetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 90 C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 90 C) Forward Average Gate Power (t = 8.3 ms, TC = 90 C) Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 90 C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.5 2.0 -40 to +125 -40 to +150 A A A2s W W A C C 1 2 3 Value

MARKING DIAGRAM

4 TO-220AB CASE 221A STYLE 3 2N639xG AYWW

2N639x = Device Code x = 4, 5, 7, or 9 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week

MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
Rating Thermal Resistance, Junction-to-Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RqJC TL Max 2.0 260 Unit C/W C 1 2 3 4

PIN ASSIGNMENT
Cathode Anode Gate Anode

Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2008

ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value.

April, 2008 - Rev. 7

Publication Order Number: 2N6394/D