BCW30LT1-D| Datasheet

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BCW30LT1 General Purpose Transistors
PNP Silicon
Features http://onsemi.com

Pb-Free Packages are Available
COLLECTOR 3 1 BASE Symbol VCEO VCBO VEBO IC Value -32 -32 -5.0 -100 Unit Vdc Vdc Vdc mAdc 3 Symbol PD 225 1.8 RqJA PD 556 300 mW/ C C/W mW SOT-23 (TO-236AB) CASE 318-08 STYLE 6 Value Unit mW 1 2 2 EMITTER

MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter-Base Voltage Collector Current - Continuous

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25 C Derate above 25 C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25 C Derate above 25 C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature

MARKING DIAGRAM

2.4 RqJA TJ, Tstg 417 -55 to +150

mW/ C C/W C C2 M G G 1

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

C2 M G

= Specific Device Code = Date Code = Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION
Device BCW30LT1 BCW30LT1G Package SOT-23 SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

October, 2005 - Rev. 1

Publication Order Number: BCW30LT1/D