BSS63LT1-D| Datasheet

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BSS63LT1 High Voltage Transistor
PNP Silicon
Features

Pb-Free Package is Available
MAXIMUM RATINGS
Rating Collector -Emitter Voltage Collector -Emitter Voltage RBE = 10 kW Collector Current - Continuous Symbol VCEO VCER IC Value -100 -110 -100 Unit Vdc Vdc mAdc

http://onsemi.com
COLLECTOR 3 1 BASE 2 EMITTER

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 TA = 25 C Derate above 25 C Board(1) Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C BM M SOT-23 CASE 318-08

MARKING DIAGRAM

Thermal Resistance Junction-to-Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25 C Derate above 25 C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature

BMM 1

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

= Specific Device Code = Date Code

ORDERING INFORMATION
Device BSS63LT1 BSS63LT1G Package SOT-23 SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

March, 2005 - Rev. 4

Publication Order Number: BSS63LT1/D