DAN222-D| Datasheet

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DAN222 Common Cathode Silicon Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications, where board space is at a premium.
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CATHODE 3

Fast trr Low CD Pb-Free Packages are Available
1 ANODE 2

MAXIMUM RATINGS (TA = 25 C)
Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current (Note 1) Symbol VR VRM IF IFM IFSM Value 80 80 100 300 2.0 Unit Vdc Vdc mAdc mAdc Adc
1

SC-75/SOT-416 CASE 463 STYLE 3

THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 -55 to +150 Unit mW C/W C 1 N9 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. N9 M G G

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 mS

ORDERING INFORMATION
Device DAN222 DAN222G Package Shipping

SC-75/SOT-416 3000/Tape & Reel SC-75/SOT-416 3000/Tape & Reel (Pb-Free) SC-75/SOT-416 3000/Tape & Reel SC-75/SOT-416 3000/Tape & Reel (Pb-Free)

DAN222T1 DAN222T1G

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 5

Publication Order Number: DAN222/D