MAC12SM-D| Datasheet

MAC12SM-D| Datasheet

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MAC12SM, MAC12SN
Preferred Device

Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications.
Features

http://onsemi.com

Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 70 C High Surge Current Capability - 90 Amperes Rugged, Economical TO-220AB Package Glass Passivated Junctions for Reliability and Uniformity Maximum Values of IGT, VGT and IH Specified for Ease of Design High Commutating di/dt - 8.0 A/ms Minimum at 110 C Immunity to dV/dt - 15 V/msec Minimum at 110 C Operational in Three Quadrants: Q1, Q2, and Q3 Pb-Free Packages are Available*

TRIACS 12 AMPERES RMS 600 thru 800 VOLTS
MT2 G MT1

MARKING DIAGRAM

MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110 C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12SM MAC12SN On-State RMS Current (All Conduction Angles; TC = 70 C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110 C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width = 1.0 msec, TC = 70 C) Average Gate Power (t = 8.3 msec, TC = 70 C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 12 90 A A Value Unit V 1 2 3 x A Y WW G TO-220AB CASE 221A-09 STYLE 4

MAC12SxG AYWW

= M, or N = Assembly Location = Year = Work Week = Pb-Free Package

I2t PGM PG(AV) TJ Tstg

33 16 0.35 -40 to 110 -40 to 150

A2sec W W C C

PIN ASSIGNMENT
1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2

ORDERING INFORMATION
Device MAC12SM MAC12SMG MAC12SN MAC12SNG Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005

Preferred devices are recommended choices for future use and best overall value.

1

December, 2005 - Rev. 3

Publication Order Number: MAC12SM/D


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