MBR6045WT-D| Datasheet
Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)
MBR6045WT SWITCHMODEt Power Rectifier
The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal.
Features http://onsemi.com
Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating 45 V Blocking Voltage Low Forward Voltage Drop Guard-ring for Stress Protection and High dv/dt Capability (> 10 V/ns) 175 C Operating Junction Temperature Pb-Free Package is Available*
SCHOTTKY BARRIER RECTIFIER 60 AMPERES, 45 VOLTS
1 2, 4 3
Mechanical Characteristics
Case: Epoxy, Molded Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Lead Temperature for Soldering Purposes:
260 C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 125 C) Per Diode Per Device Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90 C) Per Diode Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature (Note 1) Peak Surge Junction Temperature (Forward Current Applied) Symbol VRRM VRWM VR IF(AV) 30 60 IFRM 60 A MBR6045WT AYWWG IFSM 500 A Max 45 Unit V 1 2 3 TO-247AC CASE 340L STYLE 2
Leads are Readily Solderable
MARKING DIAGRAM
A
IRRM Tstg TJ TJ(pk)
2.0 -65 to +175 -65 to +175 175
A C C C
A Y WW G
= Assembly Location = Year = Work Week = Pb-Free Package
Voltage Rate of Change dv/dt 10,000 V/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device MBR6045WT MBR6045WTG Package TO-247 TO-247 (Pb-Free) Shipping 30 Units/Rail 30 Units/Rail
Semiconductor Components Industries, LLC, 2006
1
February, 2006 - Rev. 8
Publication Order Number: MBR6045WT/D
MBR6045WT-D Datasheet onsemiconductor Download PDF
Add this permalink to your bookmarks for future download of MBR6045WT-D datasheet
Permalink: http://datasheet.emcelettronica.com/onsemiconductor/MBR6045WT-D
Recent comments
1 day 10 min ago
4 days 1 hour ago
6 days 18 hours ago
1 week 1 day ago
1 week 2 days ago
1 week 2 days ago
1 week 2 days ago
1 week 2 days ago
1 week 2 days ago
1 week 2 days ago