NST45011MW6-D| Datasheet

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NST45011MW6T1G Dual Matched General Purpose Transistor
NPN Matched Pair
These transistors are housed in an ultra-small SOT-363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
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Current Gain Matching to 10% Base-Emitter Voltage Matched to 2 mV Drop-In Replacement for Standard Device These are Pb-Free Devices

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MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit V
1 6

V V mAdc SOT-363 CASE 419B STYLE 1

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAMS

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR- 5 Board (Note 1) TA = 25 C Derate Above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW

2F MG G

3.0 RqJA TJ, Tstg 328 - 55 to +150

mW/ C C/W C

2F = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)

ORDERING INFORMATION
Device NST45011MW6T1G Package Shipping

SOT-363 3000/Tape & Reel (Pb-Free)

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 0

Publication Order Number: NST45011MW6/D