1n4448| Datasheet

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RECTRON SEMICONDUCTOR
TECHNICAL SPECIFICATION

1N4448

1N4448 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25 C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/ C (25 C) Forward Current IF 500 mA Junction Temp. Tj -65 to 175 C Storage Temp. Tstg -65 to 175 C Mechanical Data
Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated
26 MIN Dimensions in millimeters

Dimensions (DO-35)

DO-35
26 MIN 0.457 DIA. 0.559

4.2 max. 2.0 DIA. max.

Electrical Characteristics (Ta=25 C) Ratings Minimum Breakdown Voltage IR= 5.0uA IR= 100uA Peak Forward Surge Current PW= 1sec. Maximum Forward Voltage IF= 100mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj= 150 C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100

Symbol BV

Ratings 75 100 1.0 1.0

Unit V

IFsurge VF IR

A V uA

0.025 5.0 50 Cj 4 trr 4 ns pF

RECTRON USA

1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com

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1n4448 DATASHEET