1ss193| Datasheet

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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION

1SS193

SOT-23 SWITCHING DIODE

FEATURES
* Power dissipation P D: 150 mW(Tamb=25OC) * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

SOT-23

MECHANICAL DATA
* * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram
0.055(1.40) 0.047(1.20)

0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30)

0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00)

0.020(0.50) 0.012(0.30)

0.100(2.55) 0.089(2.25)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.

0.019(2.00) 0.071(1.80)

1

0.118(3.00)

3 0.110(2.80) 2

Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse Breakdown Voltage (IR=100uA) Reverse voltage leakage current (VR=80V) Forward voltage (IF=100mA) Diode capacitance (VR=0V,f=1MHz) Reverse recovery time SYMBOL V(BR) IR VF CD trr MIN. 80 TYP. MAX. 0.5 1.2 3 4 UNITS V uA V pF ns 2006-3

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1ss193 DATASHEET