BCW66H| Datasheet

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TECHNICAL SPECIFICATION

SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

RECTRON

BCW66H

* Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C

FEATURES

SOT-23
COLLECTOR
3

MECHANICAL DATA
* * * * *

Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram

BASE

1

EMITTER

2

0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30)

0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00)

0.020(0.50) 0.012(0.30)

0.100(2.55) 0.089(2.25)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase , half wave, 60H Z , resistive or inductive load. For capacitive load, derate current by 20%.
O

0.019(2.00) 0.071(1.80)

1 3 2

0.118(3.00) 0.110(2.80)

Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
O

CHARACTERISTICS Collector-base breakdown voltage (IC= 10mA, IE=0) Collector-emitter breakdown voltage (IC= 10mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0) Collector cut-off current (VCB= 45V, IE=0) Collector cut-off current (VEB= 4V, IC=0) DC current gain (VCE= 10V, IC= 0.1mA) DC current gain (VCE= 1V, IC= 10mA) DC current gain (VCE= 1V, IC= 100mA) DC current gain (VCE= 2V, IC= 500mA) Collector-emitter saturation voltage (IC= 100mA, IB= 10mA) Collector-emitter saturation voltage (IC= 500mA, IB= 50mA) Base-emitter saturation voltage (IC= 100mA, IB= 10mA) Base-emitter saturation voltage (IC= 500mA, IB= 50mA) Transition frequency (VCE= 10V, IC= 20mA, f=100MHZ) Collector base capacitance (VCB= 10V, IE= 0, f=1MHZ) Emitter base capacitance (VEB= 0.5V, IE= 0, f=1MHZ) Noise figure (VCE= 5V, IE= 0.2mA, f=1kHz, Df=200Hz, RG=2KW) Marking Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".

SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO

MIN 75 45 5 80

TYP EH

MAX 0.02 0.02 630 0.3 0.7 1.25 2 12 80 10

UNITS V V V mA mA V V V V MHz pF pF dB

hFE

180 250 100

VCE(sat) VBE(sat) fT CCB CEB NF

100 -

2006-3

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