rl1n4001-rl1n4007| Datasheet

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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION

RL1N4001 THRU RL1N4007

SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES
* * * * High reliability Low leakage Low forward voltage drop High current capability

A-405
MECHANICAL DATA
* * * * * Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.20 gram
.025 (0.6) DIA. .021 (0.5)

1.0 (25.4) MIN.

.205 (5.2) .166 (4.2)

.107 (2.7) DIA. .080 (2.0)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

1.0 (25.4) MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T A = 55 oC Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note) Typical Thermal Resistance Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0A DC Maximum DC Reverse Current @T A = 25 oC at Rated DC Blocking Voltage @T A = 100 oC Maximum Full Load Reverse Current Average, Full Cycle o .375" (9.5mm) lead length at TL = 75 C NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts SYMBOL VF RL1N4001 RL1N4002 RL1N4003 RL1N4004 RL1N4005 RL1N4006 RL1N4007 UNITS 1.1 Volts 5.0 uAmps 50 30 uAmps 2002-11 SYMBOL VRRM VRMS VDC IO I FSM CJ R JA T J , T STG RL1N4001 RL1N4002 RL1N4003 RL1N4004 RL1N4005 RL1N4006 RL1N4007 UNITS
50 35 50 100 70 100 200 140 200 400 280 400 1.0 30 15 50 -55 to + 150
0

600 420 600

800 560 800

1000 700 1000

Volts Volts Volts Amps Amps pF C/ W 0 C