sr8100c| Datasheet

sr8100c| Datasheet

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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION

SR8100C

SCHOTTKY BARRIER RECTIFIER
VOLTAGE 100 Volts CURRENT 8 Amperes

FEATURES
* * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High switching capability High surge capabitity High reliability
.187 (4.7) .148 (3.8) .053 (1.3) .047 (1.2)

TO-220

MECHANICAL DATA
* * * * * Case: To-220 molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 2.24 grams
.108 (2.75) .413 (10.5) .374 (9.5) .153 (3.9) .146 (3.7) .270 (6.9) .230 (5.8)

.610 (15.5) .583 (14.8)

.157 (4.0) .051 (1.3) .043 (1.1) .035 (0.9) .102 (2.6) .091 (2.3) .583 (14.8) .531 (13.5)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

.022 (0.56) .014 (0.36) .126 (3.2)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at Derating Case Temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 1) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO I FSM RJC CJ TJ T STG SR8100C 100 70 100 8 150 2.5 450 -65 to + 150 -65 to + 150 UNITS Volts Volts Volts Amps Amps
0

C/ W pF
0 0

C C

ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 4.0A DC Maximum Average Reverse Current at Rated DC Blocking Voltage @T C = 25 o C @T C = 100 o C SYMBOL VF IR SR8100C .77 10 100 UNITS Volts mAmps mAmps 2002-4

NOTES : 1. Thermal Resistance Junction to Case. 2. Suffix "A" = Common Anode. 3. Measured at 1 MHz and applied reverse voltage of 4.0 volts.


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