rej03g0448_hat2204c| Datasheet

By datasheet - March 1st, 2009

rej03g0448_hat2204c| Datasheet

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HAT2204C
Silicon N Channel MOS FET Power Switching
REJ03G0448-0500 Rev.5.00 May 10, 2007

Features
Low on-resistance RDS(on) = 26m typ.(at VGS = 4.5 V) Low drive current High density mounting 1.8 V gate drive device

Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3

2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Pch Note2 Tch Tstg
Note1

Ratings 12 8 3.5 14 3.5 900 150 55 to +150

Unit V V A A A mW C C

Notes: 1. PW 10 us, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)

REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 1 of 7