rej03g1009_2sk2373ds| Datasheet

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2SK2373

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 100 us, duty cycle 10 % Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 30 20 0.2 0.4 0.2 150 150 55 to +150 Unit V V A A A mW C C

Electrical Characteristics
(Ta = 25 C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note: 2. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Min 30 20 -- -- 1.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.4 1.0 17.8 25.4 3.7 50 125 660 400 Max -- -- 2 1 2.0 7.5 7.0 -- -- -- -- -- -- -- Unit V V uA uA V pF pF pF ns ns ns ns Test Conditions ID = 100 uA, VGS = 0 IG = 100 uA, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 10 uA, VDS = 5 V ID = 20 mA, VGS = 4 V*2 ID = 10 mA, VGS = 10 V*2 VDS = 10 V, VGS = 0, f = 1 MHz ID = 0.1 A, VGS = 10 V, RL = 100 , PW = 2 us

Rev.3.00 Dec 27, 2006 page 2 of 5