rej03g1243_h5n2513plds| Datasheet

rej03g1243_h5n2513plds| Datasheet

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H5N2513PL
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1243-0100 Rev.1.00 Jul 25, 2008

Features
Low on-resistance High speed switching Built-in fast recovery diode

Outline
RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)
D

G

1. Gate 2. Drain (Flange) 3. Source

1

2

3

S

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 us, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150 C Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse)
Note1

Ratings 250 30 100 400 100 400 100 625 250 0.5 150 55 to +150

Unit V V A A A A A mJ W C/W C C

IAP Note3 EAR Note3 Pch Note2 ch-c Tch Tstg

REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Page 1 of 3


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