rej03g1326_rqa0008rxdqsds| Datasheet

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RQA0008RXDQS
Silicon N-Channel MOS FET
REJ03G1326-0100 Rev.1.00 Oct 16, 2006

Features
High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting

Outline
RENESAS Package code: PLZZ0004CA-A R (Package Name : UPAK )
3

3

2

1
1

1. Gate 2. Source 3. Drain 4. Source

4

2, 4

Note:

Marking is "RX". *UPAK is a trademark of Renesas Technology Corp.

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note1: Value at Tc = 25 C Symbol VDSS VGSS ID Pchnote1 Tch Tstg Ratings 16 5 2.4 10 150 55 to +150 Unit V V A W C C

This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.

Rev.1.00 Oct 16, 2006 page 1 of 12

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