rej03g1327_tbb1016ds| Datasheet

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TBB1016

Electrical Characteristics
The below specification are applicable for FET1 and FET2 unit (Ta = 25 C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| Ciss Coss PG NF Min 6 +6 +6 -- -- 0.5 0.4 11 30 1.8 0.9 27 -- Typ -- -- -- -- -- 0.8 0.7 15 35 2.2 1.3 32 1.0 Max -- -- -- +100 +100 1.1 1.0 19 42 2.6 1.7 37 1.7 Unit V V V nA nA V V mA mS pF pF dB dB Test Conditions ID = 200 uA, VG1S = VG2S = 0 IG1 = +10 uA, VG2S = VDS = 0 IG2 = +10 uA, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V, ID = 100 uA VDS = 5 V, VG1S = 5 V, ID = 100 uA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 120 k VDS = 5 V, VG1 = 5 V, VG2S = 4 V, f = 1 kHz, RG = 120 k VDS = 5 V, VG1 = 5 V, VG2S = 4 V, f = 1 MHz, RG = 120 k VDS = 5 V, VG1 = 5 V,
VG2S = 4 V, RG = 120 k, f = 200 MHz

Rev.2.00

Aug 22, 2006

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