rej03g1465_rjk6020dpkds| Datasheet

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RJK6020DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1465-0200 Rev.2.00 Sep 21, 2006

Features
Low on-resistance Low leakage current High speed switching

Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)

D

G

1. Gate 2. Drain (Flange) 3. Source

S

1

2

3

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 us, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150 C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 600 30 32 96 32 96 8.5 3.9 200 0.625 150 55 to +150 Unit V V A A A A A mJ W C/W C C

Rev.2.00 Sep 21, 2006 page 1 of 6

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