rej03g1470_hat2287wpds| Datasheet

By datasheet - March 1st, 2009

rej03g1470_hat2287wpds| Datasheet

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HAT2287WP
Silicon N Channel Power MOS FET Power Switching
REJ03G1470-0100 Rev.1.00 Sep 06, 2006

Features
Low on-resistance Low drive current High density mounting

Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 6 7 8 D D D D

5 6 7 8
4 G

4 3 2 1

1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

S S S 1 2 3

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 us, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150 C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 200 30 17 34 17 34 17 19.2 30 4.17 150 55 to +150 Unit V V A A A A A mJ W C/W C C

Rev.1.00 Sep 06, 2006 page 1 of 3