rej03g1490_rjk4018dpkds| Datasheet

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RJK4018DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1490-0100 Rev.1.00 Nov 30, 2006

Features
Low on-resistance Low leakage current High speed switching

Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)

D

G

1. Gate 2. Drain (Flange) 3. Source

1

2

3

S

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 us, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150 C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 400 30 43 129 43 129 14 11.2 200 0.625 150 55 to +150 Unit V V A A A A A mJ W C/W C C

Rev.1.00 Nov 30, 2006 page 1 of 3

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