rej03g1601_h7p1002dldsds| Datasheet

By datasheet - March 1st, 2009

rej03g1601_h7p1002dldsds| Datasheet

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H7P1002DL, H7P1002DS
Silicon P Channel MOS FET High Speed Power Switching
REJ03G1601-0100 Rev.1.00 Nov 16, 2007

Features
Low on-resistance RDS(on) = 85 m typ. Low drive current 4.5 V gate drive device can driven from 5 V source

Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4

RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 D

1. Gate 2. Drain 3. Source 4. Drain

H7P0601DS
1 2 3 S

H7P0601DL

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 us, duty cycle 1% 2. Value at Tc = 25 C 3. Value at Tch = 25 C, Rg 50 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Rating 100 20 15 60 15 12 14.4 30 150 55 to +150 Unit V V A A A A mJ W C C

REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 1 of 8