rej03g1647_rjk0353dpads| Datasheet

By datasheet - March 1st, 2009

rej03g1647_rjk0353dpads| Datasheet

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RJK0353DPA
Silicon N Channel Power MOS FET Power Switching
REJ03G1647-0300 Rev.3.00 Apr 10, 2008

Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 m typ. (at VGS = 10 V) Pb-free

Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 6 7 8 D D D D

5 6 7 8
4 G

4 3 2 1

1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

S S S 1 2 3

Absolute Maximum Ratings
(Ta = 25 C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 us, duty cycle 1% 2. Value at Tch = 25 C, Rg 50 3. Tc = 25 C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 30 20 35 140 35 16 25.6 40 3.13 150 55 to +150 Unit V V A A A A mJ W C/W C C

REJ03G1647-0300 Rev.3.00 Apr 10, 2008 Page 1 of 6