2sb1713| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

2SB1713
Transistors

-3A / -12V Bipolar transistor
2SB1713
Applications Low frequency amplification, driver Dimensions (Unit : mm)
MPT3

Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA)
(1)Base

Structure PNP epitaxial planar silicon transistor

(2)Collector (3)Emitter

Abbreviated symbol : XW

Absolute maximum ratings (Ta=25 C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC tj tstg Limits -15 -12 -6 -3 -6 0.5 2 150 -55 to +150
1 2 3

Packaging specifications
Unit V V V A W C C

Package Packaging type Code Part No. 2SB1713 Basic ordering unit (pieces)

MPT3 Taping T100 1000

1 Pw=1ms, Pulsed. 2 Each terminal mounted on a recommended land. 3 Mounted on a 40 40 0.7mm ceramic board.

Electrical characteristics (Ta=25 C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
Pulsed

Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob

Min. Typ. Max. Unit -12 -15 -6 - - - 270 - - - - - - - - 280 30 - - - -100 -100 680 - - nA mV - pF V IC= -1mA IC= -10uA IE= -10uA VCB= -15V VEB= -6V

Conditions

-120 -250

IC/IB= -1.5A/ -30mA VCE= -2V, IC= -500mA VCB= -10V , IE=0mA , f=1MHz

MHz VCE= -2V, IE=500mA , f=100MHz

Rev.A

1/2

2sb1713 Datasheet rohm Download PDF

Add this permalink to your bookmarks for future download of 2sb1713 datasheet

Permalink: http://datasheet.emcelettronica.com/rohm/2sb1713

2sb1713 DATASHEET